SiC Substrate Wafer Manufacturer碳化硅衬底片晶片厂家, 4H-N/4H-SI SiC Substrate Wafer Manufacturer 4H-N/4H-SI碳化硅衬底片生产厂家

SiC As-cut Substrate Wafer

Diameter: 150mm
Type: N type or SI type
Thickness: 600um
Package: Cassette
碳化硅切割片

直径：100mm/150mm
厚度：440um/480um
等级：测试级/研究级/产品级
类型：导电N型/半绝缘SI型
4inch SiC As-cut Substrate

Diameter: 100mm
Type: N type or SI type
Thickness: 440um
Package: Cassette
Dummy Grade SiC Ingots

Diameter：100±0.25mm
Grade: Dummy Grade
Type: 4H-N / 4H-SI
Thickness: Min ≥15mm
测试D级碳化硅晶锭晶棒

直径:100±0.25mm
厚度: Min ≥15mm
等级：测试D级
类型：4H-N导电型；4H-SI半绝缘型
Production Grade SiC Ingots

Diameter：150±0.2mm
Grade: Production Grade
Type: 4H-N / 4H-SI
Thickness: Min ≥15mm
产品P级碳化硅晶锭晶棒

直径:150±0.2mm
厚度: Min ≥15mm
等级：产品级P级
类型：4H-N导电型；4H-SI半绝缘型
2 Inch GaN-On-Sapphire Template

Dimensions: Ф 50.8 mm ± 1 mm
Thickness:4.5µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓晶片蓝宝石氮化镓衬底晶片

尺寸：2英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂，镁掺杂
衬底结构：GaN-On-Sapphire
4 Inch GaN-On-Sapphire Template

Dimensions: Ф 100 mm ± 0.1 mm
Thickness:4.5 µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓衬底晶片 4英寸GaN氮化镓衬底片

尺寸：4英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂
衬底结构：GaN-On-Sapphire
2 Inch Free-Standing GaN Substrate

Dimensions: Ф 50.8 mm ± 1 mm
Thickness: 350 ± 25 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 15 µm
氮化镓自支撑晶片 2英寸GaN衬底晶片

尺寸：2英寸
厚度：350um
掺杂：非掺杂，硅掺杂，铁掺杂
等级：测试级，研究级，产品级，优选级
4 Inch Free-Standing GaN Substrate

Dimensions: Ф 100 mm ± 1 mm
Thickness: 400 ± 50 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 40 µm
氮化镓自支撑衬底片 4英寸GaN氮化镓晶片

尺寸：4英寸
厚度：400um
掺杂：非掺杂，硅掺杂
电阻率：≤0.5Ω.cm
Square Free-Standing GaN Substrate

Dimension:10*15mm²
Thickness: 350±25um
Useable Surface Area:＞90%
Conduction Type: N Type,SI Type

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