SiC Wafer Manufacturer Support Customization
Grade: D R P
Dimension: 2 inch to 8 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
SiC Substrate Wafer Manufacturer
Grade: Dummy Grade
Dimension: 2 inch to 8 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
D Grade 4 inch SiC Substrate Wafer Manufacturer
Product Name: SiC Substrate
Grade: Dummy Grade
Type: 4H-N ; 4H-SI
Thickness： 350um；500um
D Grade 6 inch SiC Wafer Manufacturer
Grade: Dummy Grade
Dimension: 6 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
D Grade 8 inch SiC Substrate Wafer Manufacturer
Product Name: SiC Substrate
Grade: Dummy Grade
Type: 4H-N
Thickness：500um
SiC Substrate Manufacturer
Grade: Research Grade
Dimension: 4 inch 6 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
4H-SI SiC Substrate Manufacturer
Grade: Research Grade
Dimension: 4 inch 6 inch 8 iNCh
Type: 4H-SI
Thickness:500um
P Grade 8 inch SiC Wafer Manufacturer
Grade: Production Grade
Dimension: 8 inch,6 inch
Type: 4H-N,4H-SI
Thickness:500um
P Grade 6 inch SiC Substrate Manufacturer
Grade: Production Grade
Dimension: 6 inch,4 inch
Type: 4H-N,4H-SI
Thickness: 350um 500um
8 inch SiC Substrate
Type: 4H-N
Diameter：200mm
Grade: D and P
Product Name: SiC Substrate
SiC Wafer Manufacturer
Grade: D R P
Dimension: 2 inch-8 inch
Type: 4H-N
Thickness: 350um
SiC Wafer Manufacturer For MOSFET
Dimension: 4 inch 6 inch 8 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
MPD: <0.2cm2
P Grade 4 inch SiC Wafer Manufacturer
Grade: Production Grade
Dimension: 4 inch 6 inch
Type: 4H-N
Thickness: 350um 500um
8 inch Semi-insulated SiC Wafer Manufacturer
Type: 4H-HPSI
Diameter：200mm
Grade: D and P
Product Name: SiC Substrate
4H-SiC Wafer/Substrate Manufacturer
Grade: D R P
Dimension: 2 inch to 8 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
GaN Epitaxial On Si For RF
GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
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E-mail:kim@homray-material.com；tina@homray-material.com
M.P: +86-15366208370 ; +86-15366203573