GaN-on-Si Epi Wafer Manufacturer,GaN-on-SiC Epi Wafer supplier

GaN Epitaxial On Si For RF

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
D-mode耗尽型硅基氮化镓外延片

衬底材质：Silicon硅
衬底厚度：675um，1000um
衬底尺寸：4英寸，6英寸，8英寸
保护层类型：GaN，SiN
GaN Epitaxial On Si For Power HEMT D-Mode

GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter: 2inch,4inch,6inch,8inch
Substrate Thickness: 675um，1000um
Epi Layer Total Thickness：2~5.5um
GaN On Si HEMT Epi Wafer Manufacturer

GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter:4inch,6inch,8inch
Substrate Thickness:675,1000um
Epi Layer Total Thickness: 2~5.5um
E-mode增强型硅基氮化镓外延片

衬底材质：Silicon硅
衬底厚度：675um，1000um
衬底尺寸：4英寸，6英寸，8英寸
pGaN厚度：90~100nm
pGaN on Si Epi Wafer

GaN/AlGaN/p-GaN E-mode
Dimension: 4 inch 6 inch 8 inch
Substrate Thichkness: 675um 1000um
Epi layer total thickness: 2~5.5um
GaN Epitaxial On SiC For Power HEMT

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4''6''
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
GaN On SiC RF HEMT Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Diameter: 4 inch, 6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘
GaN Epitaxial On Sapphire For HEMT

GaN-On-Sapphire Epi Wafer For HEMT
Substrate Size: 2inch 3inch 4inch 6inch
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4.5um
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire

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