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2 Inch GaN-On-Sapphire Template
Dimensions: Ф 50.8 mm ± 1 mm
Thickness:4.5µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90% -
氮化镓晶片 蓝宝石氮化镓衬底晶片
尺寸:2英寸
厚度:4.5um 20um
掺杂:非掺杂,硅掺杂,镁掺杂
衬底结构:GaN-On-Sapphire
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4 Inch GaN-On-Sapphire Template
Dimensions: Ф 100 mm ± 0.1 mm
Thickness:4.5 µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90% -
氮化镓衬底晶片 4英寸GaN氮化镓衬底片
尺寸:4英寸
厚度:4.5um 20um
掺杂:非掺杂,硅掺杂
衬底结构:GaN-On-Sapphire
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