As-Cut Wafer SiC Processing Parts Manufacturer
Grade: D R P
Dimension: 2 inch to 8 inch
Type: 4H-N
Thickness: 500um 800um 900um etc
Product Description
As-cut SiC wafers (silicon carbide wafers) are revolutionizing the semiconductor industry as the cornerstone of next-generation power electronics. HMT as a trusted SiC substrate manufacturer provide 4H-N 2 inch to 8 inch As-Cut SiC Wafers. Designed for high-voltage, high-frequency, and high-temperature applications, these unpolished wafers deliver exceptional material integrity and cost-efficiency, making them ideal for electric vehicles (EVs), renewable energy systems, 5G infrastructure, and industrial automation.
To comprehend the significance of SiC in new energy vehicles, it is essential to first recognize its unique physical and chemical properties. As a semiconductor material, SiC exhibits electrical conductivity far superior to conventional silicon, enabling it to maintain lower resistance even under high-temperature and high-voltage environments. Additionally, its exceptional thermal stability and chemical inertness allow it to withstand extreme temperatures and corrosive conditions - characteristics of paramount importance in automotive applications.
The application of SiC devices in electric vehicles primarily encompasses motor drive inverters and onboard power supply systems. These components can operate effectively under high voltage and large current conditions while maintaining compact dimensions and reduced weight. This proves crucial for enhancing the overall energy efficiency and driving range of electric vehicles, while simultaneously contributing to weight reduction and lower energy consumption.
Beyond automotive applications, SiC finds extensive utilization in other energy-saving domains such as solar inverters and wind power generation. In these fields, SiC has demonstrated equally outstanding performance, establishing itself as an ideal solution for energy-efficient applications.
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