-
4H-N Raw-cut SiC Wafer
Diameter: 100mm 150mm 200mm
Type: 4H-N Conductive
Thickness: About 440um
Package: Cassette -
6 inch Unpolished SiC Wafer T-900um
Diameter: 150mm
Type: 4H-N Conductive
Thickness: About 900um
Package: Cassette -
2 inch As Cut SiC Wafer T-1100um
Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 1100um
Package: Cassette -
2 Inch Raw Cut SiC Wafer T-1200um
Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 1200um
Package: Cassette -
2 inch Raw-Cut SiC Wafer T-900um
Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 900um
Package: Cassette -
碳化硅As-cut切割晶片
直径: 150mm
类型: N type or SI type
厚度: 600um
包装: 卡塞盒 -
SiC As-cut Substrate Wafer
Diameter: 150mm
Type: N type or SI type
Thickness: 600um
Package: Cassette -
碳化硅切割片
直径:100mm/150mm
厚度:440um/480um
等级:测试级/研究级/产品级
类型:导电N型/半绝缘SI型 -
4inch SiC As-cut Substrate
Diameter: 100mm
Type: N type or SI type
Thickness: 440um
Package: Cassette
Home<<1
>>Last