SiC substrate is the cornerstone of GaN and SiC application in the third generation semiconductor materials. Due to the limitation of technology and process level, large-scale application of GaN material as substrate is still facing challenges. Its application mainly uses sapphire, silicon wafer or semi-insulating SiC wafer as substrate, and fabricate GaN devices by epitaxy growth, which is mainly used in the field of macro station communication radio frequency. The silicon carbide material is mainly in the conductive N type SiC substrate epitaxial growth SiC epitaxial layer, should be used in all kinds of power devices, in recent years, with the maturity of technology and preparation cost, the application in the field of new energy continues to penetrate.

HMT offer 4H-SiC substrate and SiC ingots, both 4 inch and 6 inch SiC wafer are available in HMT. SiC substrate can be divided into: semi-insulating type and conductive type. 4H-SI type SIC Substrate has high resistivity (resistivity ≥108 ω ·cm), semi-insulating substrate and heterodyne gallium nitride epitaxy can be used as radio frequency device material, mainly applied with the above scene 5G communication, national defense and other fields;

GaN material, as a kind of wide band gap semiconductor material, has been studied for many years in the academic circle. In the 1990s, GaN began to shine in the blue LED, and then aroused wider attention in the industry.

SiC wafer after epitaxial growth is mainly used to manufacture power devices, radio frequency devices and other discrete devices, can be widely used in new energy vehicles, 5G communications, photovoltaic power generation, rail transit and other modern industrial fields.

While the fuel efficiency of traditional cars is determined by the engine, the range of future electric cars will be determined by the third-generation semiconductor SiC technology. Yole Developpement reports that SiC（Silicon Carbide） has become a market darling since Tesla (TSLA) led the world in using it for Model 3 inverter modules to create superior range.As the leading SiC Substrate wafer manufacturer, Homray Material Technology offer 4 inch SiC Substrate and 6 inch SiC Wafer.

GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to market research firm Strategies Unlimited. By 2007 this is predicted to soar to $4.5 billion, with GaN-based LEDs, lasers and electronic devices contributing $4 billion, $402 million and $129 million, respectively.Today, GaN substrates are produced by vapor-phase transport