SiC Substrate Wafer
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SiC Boule/Ingots
GaN Substrate Wafer
Free-Standing GaN
GaN-On-Sapphire Template
SiC Epitaxial Wafer

6 inch Unpolished SiC Wafer T-900um

Diameter: 150mm
Type: 4H-N Conductive
Thickness: About 900um
Package: Cassette

Product Description

As the leading As-cut SiC wafer(no polishing) manufacturer and supplier in China, HMT provide 900um thickness Raw-cut SiC wafer with 2 inch 4 inch and 6 inch now. Slicing from our Conducitve N type SiC Boules and without lapping and polishing process. We offer D grade R grade and P grade of As-cut SiC wafer to different customers. Unpolished SiC wafers can be applied to testing diamond grinding wheel, abrasives, backside thinning etc.

6 inch As-cut SiC Wafer (no lapping no polishing)

6 inch Raw-cut SiC Wafer Spec: