Dummy Grade SiC Ingots

The leading SiC substrate manufacturer-Homray Material Technology offers SiC ingots with 4 inch and  6 inch. We provide the best price for 4H-N conductive type and semi-insualting type SiC ingots on the market. Our SiC ingots have been widely used by many ingot wire-saw manchine manufacturers in domestic and abroad.

SiC has the following properties:

• Wide Energy Bandgap
• High electrical breakdown field
• High saturation drift velocity
• High thermal conductivity

SiC (Silicon Carbide) material is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.




SiC Ingots Package