8 inch Semi-insulated SiC Wafer Manufacturer
Type: 4H-HPSI
Diameter:200mm
Grade: D and P
Product Name: SiC Substrate
Product Description
Are you looking for high resistivity SiC wafer? HMT produces 4inch to 8 inch Semi-insulated SiC Substate Wafer on the market. 8 inch HPSI SiC wafer is the most newest and biggest dimension of SiC products. We provide both D grde and P grade for different applications. The resistivit of 8 inch D grade SiC wafer ≥1E5ohm·cm, P grade ≥1E8ohm·cm. Please contact us if you have purchase demand.
Basic Parameter
SiC substrate is a compound semiconductor single crystal material composed of carbon and silicon, which has the characteristics of large band gap, high thermal conductivity, high critical breakdown field strength and high electron saturation drift rate. Depending on the downstream application area, the core categories include:
1) Conductive type: can be further made into Schottky diodes, MOSFET, IGBT and other power devices, used in new energy vehicles, rail transit and high-power transmission and transformation fields.
2) Semi-insulated type: can be further made into HEMT and other microwave RF devices, used in information communication, radio detection and other fields.
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