P Grade 6 inch SiC Substrate Manufacturer

As the professional manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, Homray Material Technology provide high quality production P grade SiC substrate. The SiC Wafer dimension include 2 inch 4 inch 6 inch and newest 8 inch. We has developed SiC boule growth technology and SiC wafer processing technology, established a whole production line to manufacturer SiC substrate of polytype 4H in different quality grades for researcher and industry manufacturers,Which is applied in GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.

SiC Substrate Application


6 inch SiC Substrate Basic Parameters


The major SiC substrate are 4 inch, 6 inch, 8 inch single crystal substrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic components, is an energy-saving cold light source. SiC material has the advantages of low lattice mismatch with GaN, high thermal conductivity. The third generation of semiconductors represented by SiC has a high bandwidth, high thermal conductivity, high field breakdown, high saturation electron drift rate, stable chemical properties, high hardness, abrasion resistance, high bond.