D Grade 4 inch SiC Substrate Wafer Manufacturer

HMT company mainly produce 4H-SiC wafer and SiC ingot. Although nearly all manufacturers stopped 4 inch SiC production, but HMT still keep few 4 inch SiC Substrate wafer capacity allocation at present. We supply 4 inch dummy grade SiC substrate wafer and SiC crystals. Meanwhile, we also supply 6 inch Conductive SiC ingot for cutting/grinding and polishing machine testing.

SiC Substrates can be divided into two types according to the substrate preparation method and the downstream application. One is to grow SiC homogeneous epitaxy, applied for new energy vehicles, photovoltaic, industrial control, rail and other power fields of conductive SiC substrate, epitaxy layer to manufacture all kinds of power devices; The other is growth of GaN  heteroepitaxy, applied  for 5G communications, national defense and other RF fields of semi-insulated  SiC substrate, mainly used in the manufacture of GaN RF devices.

Most promising applications of SiC-based microwave electronics are wireless communications and radar, since conventional GaAs-based devices cannot operate at power densities and high temperatures that are demanded i.e. for defence purposes for radar. The same properties allow wireless communication to benefit from SiC. For instance, SiC RF-transistors operate at power densities beyond the theoretical limit of GaAs-based transistors. SiC RF-devices may be used in cellphone base stations.