D Grade 8 inch SiC Substrate Wafer Manufacturer

HMT as the leading 8 inch SiC Substrate Wafer Manufacturer, we can supply Conductive N type 8 inch SiC substrate wafer and 4H-SI type SiC substrate. As you know, 8 inch SiC wafer is the newest and biggest dimension of SiC industry. More and more companies are switching to 8 inch, customers can purchase low cost but high quality 8 inch SiC substrate in our company.

8 inch SiC Substrate Wafer Basic Spec



The third generation semiconductor represented by SiC silicon carbide has the advantages of forbidden bandwidth, high thermal conductivity, high breakdown field strength, high saturated electron drift rate, stable chemical properties, high hardness, wear resistance, high bond and high energy and radiation resistance, etc., and can be widely used in the manufacture of high temperature, high frequency, high power, radiation resistance, high power and high density integrated electronic devices. Power electronic devices (SBD, MOSFET, IGBT, BJT, JFET, etc.) developed with SiC silicon carbide substrate are used in power transmission and transformation, wind power generation, solar energy, hybrid electric vehicles and other power electronics fields to reduce power loss, reduce heat, high temperature work, improve efficiency and increase reliability.