D Grade 6 inch SiC Wafer Manufacturer

A reliable SiC Wafer Manufacturer you can trust is HMT which offering 6 inch single crystal SiC Wafers both D grade R grade and P grade for different applications. 4H-N type and 4H-SI type are both available in HMT company. 6 inch P grade SiC Wafers have ultra low MPD and used for power device like SBD,MOSFET. Even our 6 inch D grade SiC wafer still has good parameters with low MPD low polytype low TTV etc... We suppy all dimensions from 50.8mm 2 inch to 200mm 8 inch SiC Substrate Wafers. 

Applications for SiC Wafers

SiC wafer and power device Application

● Substrate wafer application: high-end lighting, SiC epitaxial wafer, GaN epitaxial wafer, PSS substrate, etc

● New energy vehicle applications: electric vehicle electric drive system power devices, charging pile power devices, etc

● Military applications: airborne radar communication equipment power devices, microwave communication high-power devices, etc

●Ultra-high speed integrated circuit: RFIC (Radio frequency integrated circuit), SOS chip, optical communication chip, 5G technology, etc

As the third generation of semiconductor materials, SiC Wafer has become one of the new semiconductor materials of great concern nowadays due to its excellent performance under high temperature, high pressure, high frequency and other conditions. The crystal structure of SiC determines its unique physical properties. Compared with Si and GaAs, SiC has better physical properties. The band gap is large, which is close to 3 times that of Si, ensuring the long-term reliability of the device under high temperature operation; The breakdown field strength is high, which is 10 times that of Si, ensuring the voltage tolerance of the device and improving the voltage tolerance of the device; The saturated electron rate is 2 times that of Si, which increases the operating frequency and power density of the device; High thermal conductivity, more than 3 times that of Si, increases the heat dissipation capacity of the device, and realizes the miniaturization of the device.