SiC Substrate Manufacturer
Grade: Research Grade
Dimension: 4 inch 6 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
Product Description
As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate , Homray Material Technology offers the best price on the market for 4 inch and 6 inch Research R grade SiC substrate. Even customzing SiC Substrate, customers can still have the preferential price for all SiC Substrates. The SiC substrate wafer widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic components, is an energy-saving cold light source.
Silicon Carbide SiC is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. Silicon carbide is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers).
Blue LEDs on SiC-basis have been commercially available for several years now. The next important step will be the development of blue SiC-laser-diodes, which can be used to increase data storage capacity among many other applications. The use of SiC-based UV- diodes may also find various applications, i.e. monitoring of combustion processes, all sorts of UV-detection while detector is almost solar-blind.
Electronics based on SiC shows advantages compared to Si-devices, where environmental conditions are adverse, i.e. ionizing radiation, heat-aggressive chemicals. For instance, SiC-based electronics would help to reduce weight and therefore costs of spacecraft, since SiC-devices showed to be much more resistant to ionizing radiation than Si-devices. Thus, a reduction of radiation-shielding is possible. Further, they may reduce or eliminate the use of cooling systems that have to be implemented as soon as Si-electronics is used.
Semi-insulated SiC Substrate Conductive N SiC Substrate
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