SiC Substrate Wafer Manufacturer碳化硅衬底片晶片厂家, 4H-N/4H-SI SiC Substrate Wafer Manufacturer 4H-N/4H-SI碳化硅衬底片生产厂家

GaN On Si Epi Wafer Supplier RF Device

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
D-mode耗尽型硅基氮化镓外延片

衬底材质：Silicon硅
衬底厚度：675um，1000um
衬底尺寸：4英寸，6英寸，8英寸
保护层类型：GaN，SiN
GaN Epitaxial On Si For Power HEMT D-Mode

GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter: 2inch,4inch,6inch,8inch
Substrate Thickness: 675um，1000um
Epi Layer Total Thickness：2~5.5um
GaN On Si HEMT Epi Wafer Manufacturer

GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter:4inch,6inch,8inch
Substrate Thickness:675,1000um
Epi Layer Total Thickness: 2~5.5um
E-mode增强型硅基氮化镓外延片

衬底材质：Silicon硅
衬底厚度：675um，1000um
衬底尺寸：4英寸，6英寸，8英寸
pGaN厚度：90~100nm
pGaN on Si Epi Wafer

GaN/AlGaN/p-GaN E-mode
Dimension: 4 inch 6 inch 8 inch
Substrate Thichkness: 675um 1000um
Epi layer total thickness: 2~5.5um
GaN Epitaxial On SiC For Power HEMT

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4''6''
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
GaN On SiC RF HEMT Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Diameter: 4 inch, 6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘
GaN Epitaxial On Sapphire For HEMT

GaN-On-Sapphire Epi Wafer For HEMT
Substrate Size: 2inch 3inch 4inch 6inch
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4.5um
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire
4H-N Raw-cut SiC Wafer

Diameter: 50.8mm 100mm 150mm 200mm
Type: 4H-N Conductive
Thickness:400um 600um 900um 厚度定制
Package: Cassette
As-Cut Wafer SiC Processing Parts Manufacturer

Grade: D R P
Dimension: 2 inch to 8 inch
Type: 4H-N
Thickness: 500um 800um 900um etc
6 inch Unpolished SiC Wafer T-900um

Diameter: 150mm
Type: 4H-N Conductive
Thickness: About 900um
Package: Cassette
2 inch As Cut SiC Wafer T-1100um

Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 1100um 定制厚度
Package: Cassette
2 Inch Raw Cut SiC Wafer T-1200um

Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 1200um
Package: Cassette

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