SiC Epitaxial Wafer Supplier

AlGaN/GaN On Si Epi Wafer (AlN Buffer) manufacturer

GaN on Si Epi Wafer
Dimension: 4 inch 6 inch 8 inch
Substrate Thichkness: 675um 1000um
Cap Layer：SiN or GaN cap
4” GaN On Si (Silicon) HEMT Epi Wafer Producers

GaN-On-Si Epi Wafer
Substrate Diameter: 4inch,6inch,8inch
Substrate Thickness: 675um，1000um
Cap Layer: SiN/GaN/p-GaN
Silicon Carbide Epitaxial Wafer

Size: 3'' 4'' 6''
Type: N-Type/ P-Type
Dopant: Nitrogen/Aluminum
Thickness:0.2~50μm

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