GaN Epitaxial On Si For RF

As the leading manufacturer and supplier of GaN (Gallium Nitride) Epi (Epitaxial) wafer and GaN-On-Si Epi Wafer For RF HEMT application. Homray Material Technology offers 2inch to 6 inch GaN (Gallium Nitride) on Si (Silicon) Epi (Epitaxial) wafer. The RF HEMT product is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) high resistance Si-wafer for RF power applications. SiN cap,GaN cap,AlGaN barrier and other layer can be customized by customers. Our GaN-on-Si Epi wafer has high quality and excellent uniformity.

Layer Structrure For RF HEMT                         Key Features
 

The epitaxial layer consists of an active heterostructure based on an AlGaN layer and a GaN channel, providing high electron mobility and low sheet resistivity.
The proprietary high-voltage buffer design offers low leakage currents, high breakdown voltage, low dispersion and a consistently low wafer bow.

Standard Layer Specification


Characterization Specifications