GaN Epitaxial On Si For Power HEMT D-Mode

As the leading manufacturer and supplier of GaN (Gallium Nitride) Epi (Epitaxial) wafer and GaN-On-Si Epi Wafer For Power HEMT application. Homray Material Technology offers 2inch~8inch GaN on Si Epiwafer for D-Mode Power HEMT. The HMT650V product is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) Si-wafer for high voltage power switching applications. Homray Material Technology offers two standard HEMT structures: one having an Al0.25Ga0.75N barrier w/o an AlN spacer layer and the other having an Al0.25Ga0.75N barrier with an AlN spacer layer. Custom barrier, cap layer and in-situ SiN designs are available upon request.

GaN Epi Wafer Application

• 5G-related RF devices, such as power amplifier
• High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.
• Durable and reliable devices in harsh environments
• High-end sensor devices

Standard Layer Structure For Power HEMT D-Mode     Key Features
 

Standard Layer Specifications For Power HEMT D-Mode