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Home > Products > SiC As-cut Wafer
  • 4H-N Raw-cut SiC Wafer

    Diameter: 50.8mm 100mm 150mm 200mm
    Type: 4H-N Conductive 
    Thickness:400um 600um 900um 厚度定制
    Package: Cassette

  • As-Cut Wafer SiC Processing Parts Manufacturer

    Grade:  D R P
    Dimension: 2 inch to 8 inch
    Type: 4H-N 
    Thickness: 500um 800um 900um etc

  • 6 inch Unpolished SiC Wafer T-900um

    Diameter: 150mm
    Type: 4H-N Conductive 
    Thickness: About 900um
    Package: Cassette

  • 2 inch As Cut SiC Wafer T-1100um

    Diameter: 50.8mm
    Type: 4H-N Conductive 
    Thickness: About 1100um 定制厚度
    Package: Cassette

  • 2 Inch Raw Cut SiC Wafer T-1200um

    Diameter: 50.8mm
    Type: 4H-N Conductive 
    Thickness: About 1200um
    Package: Cassette

  • 2 inch Raw-Cut SiC Wafer T-900um

    Diameter: 50.8mm
    Type: 4H-N Conductive 
    Thickness: About 900um
    Package: Cassette

  • 碳化硅As-cut切割晶片

    直径: 150mm
    类型: N type or SI type
    厚度: 600um 900um 定制厚度
    包装: 卡塞盒

  • SiC As-cut Substrate Wafer

    Diameter: 100mm 150mm 200mm
    Type: SI type
    Thickness: About 600um
    Package: Cassette

  • 碳化硅切割片

    直径:100mm/150mm
    厚度:440um/480um
    等级:测试级/研究级/产品级
    类型:导电N型/半绝缘SI型

  • 4inch SiC As-cut Substrate

    Diameter: 100mm
    Type: N type or SI type
    Thickness: 440um
    Package: Cassette

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