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  • SiC Power Devices: The Game-changer of Future Power Electronics

  • 碳化硅晶体单晶生长原理,你了解吗?

  • 碳化硅衬底产业链 SiC碳化硅晶体生产商

  • SiC碳化硅衬底生产厂商-4寸N型晶锭

  • 碳化硅晶片加工过程

  • Silicon Carbide(SiC) Wafer Manufacturer-New Energy& 5G Construction:

    SiC substrate is the cornerstone of GaN and SiC application in the third generation semiconductor materials. Due to the limitation of technology and process level, large-scale application of GaN material as substrate is still facing challenges. Its application mainly uses sapphire, silicon wafer or semi-insulating SiC wafer as substrate, and fabricate GaN devices by epitaxy growth, which is mainly used in the field of macro station communication radio frequency. The silicon carbide material is mainly in the conductive N type SiC substrate epitaxial growth SiC epitaxial layer, should be used in all kinds of power devices, in recent years, with the maturity of technology and preparation cost, the application in the field of new energy continues to penetrate.

  • Supply SiC substrate at a competitive price

    HMT offer 4H-SiC substrate and SiC ingots, both 4 inch and 6 inch SiC wafer are available in HMT. SiC substrate can be divided into: semi-insulating type and conductive type. 4H-SI type SIC Substrate has high resistivity (resistivity ≥108 ω ·cm), semi-insulating substrate and heterodyne gallium nitride epitaxy can be used as radio frequency device material, mainly applied with the above scene 5G communication, national defense and other fields;

  • GaN LED Wafer Manufacturer-From LED To Power Electronics

    GaN material, as a kind of wide band gap semiconductor material, has been studied for many years in the academic circle. In the 1990s, GaN began to shine in the blue LED, and then aroused wider attention in the industry.

  • SiC Substrate Manufacturer Provide SiC Epi Wafer

    SiC wafer after epitaxial growth is mainly used to manufacture power devices, radio frequency devices and other discrete devices, can be widely used in new energy vehicles, 5G communications, photovoltaic power generation, rail transit and other modern industrial fields.

  • The Star of Third-Generation Semiconductor -SiC Substrate Wafer

    While the fuel efficiency of traditional cars is determined by the engine, the range of future electric cars will be determined by the third-generation semiconductor SiC technology. Yole Developpement reports that SiC(Silicon Carbide) has become a market darling since Tesla (TSLA) led the world in using it for Model 3 inverter modules to create superior range.As the leading SiC Substrate wafer manufacturer, Homray Material Technology offer 4 inch SiC Substrate and 6 inch SiC Wafer.

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