SiC Substrate Wafer
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GaN Epitaxial Wafer
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GaN Substrate Wafer
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SiC Epitaxial Wafer

GaN On Si HEMT Epi Wafer Manufacturer

GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter:4inch,6inch,8inch
Substrate Thickness:675,1000um
Epi Layer Total Thickness: 2~5.5um

Product Description

As the leading manufacturer of GaN Epi Wafer, HMT suppy GaN-on-Si Epi wafer on100mm,150mm and 200mm diameter with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power HEMT applications. We offer Both D-mode and E-mode structure of GaN-on-Si Epi wafer with high quality but best price on the market.

HMT has complete production line of 50/100/150/200mm GaN Epi Wafer products. We have complete and independent supporting system, including epi growth,clean,test and maintain equipments

Standard Layer Structrure For Power HEMT E-mode

Standard Layer Specification For Power HEMT E-mode
Please contact us for D-mode and RF detailed structure.

Characterization Specifications