SiC As-cut Substrate Wafer

As the high quanlity SiC As-cut wafer manufacturer and supplier in the third semiconductor market, HMT company can supply 4 inch and 6 inch SiC As-cut Wafer for lapping and polishing machines testing both for domestic and abroad customers. We supply both N type and semi-insulating type SiC As-cut Wafer. The thickness of raw cut SiC wafer is about 440um,600um,1000um etc. Please contact us for detailed thickness and specicication.

HMT SiC As-cut Wafer Picture


Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon, which is one of the ideal materials for making high temperature, high frequency, high power and high voltage devices. Compared with the traditional silicon material (Si), the band gap of silicon carbide is 3 times that of silicon. The thermal conductivity is 4-5 times that of silicon; The breakdown voltage is 8-10 times that of silicon; The electronic saturation drift rate is 2-3 times that of silicon, which meets the needs of modern industry for high power, high voltage and high frequency. It is mainly used for the production of high-speed, high-frequency, high-power and light-emitting electronic components. The downstream application fields include smart grid, new energy vehicles, photovoltaic wind power, 5G communication, etc. Silicon carbide diodes and MOSFETs have been commercially applied.

Comparison of different semiconductor materials