Home | 中文 English
  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us
  • SiC Substrate Wafer
  • Dummy SiC Substrate
  • Research SiC Substrate
  • Production SiC Substrate
  • Ultralow MPD SiC Substrate
  • GaN Epitaxial Wafer
  • SiC As-cut Wafer
  • SiC Boule/Ingots
  • GaN Substrate Wafer
  • Free-Standing GaN
  • GaN-On-Sapphire Template
  • SiC Epitaxial Wafer
Home > Products > SiC As-cut Wafer > 2 inch As Cut SiC Wafer T-1100um

2 inch As Cut SiC Wafer T-1100um

Diameter: 50.8mm
Type: 4H-N Conductive 
Thickness: About 1100um 定制厚度
Package: Cassette

Product Description

HMT company not only produce SiC Boules but also supply 2 inch As-cut SiC Wafer(Without Lapping and Polishing) with conductive N type to the worldwide. We can provide high quanlity of raw cut 2 inch SiC wafer with 600um 900um 1100um 1200um thickness etc. The raw cut SiC wafers were slicing from SiC boules directly and witout lapping and polishing process. You can test diamond grinding, newest polishing materials and so on. Meanwhile, if you need other dimension of unpolished SiC wafer such as 4 inch 6 inch and nesest 8 inch, please contact us immediately!

Spec:

Product Name: As-cut SiC Wafer
Brand Name: HMT
Model : 2 INCH
Place of Origin: CHINA
Price: Contact us
Packaging Details: Cassette
Delivery Time: 30 days
Payment Terms: T/T
Customized: Support
Surface Orientation: 4°toward <11-20>±0.5°
Front: Si Face
Back: C Face
Dopant: N-typeNitrogen

Support and Services:

Our As-cut SiC Wafer product comes with comprehensive technical support and services to ensure reliable and efficient performance in your applications. Our team of experienced engineers and technicians are available to assist you with:

  • Product selection and customization
  • Material characterization and analysis
  • Quality control and assurance



Related Products

  • 4H-N Raw-cut SiC Wafer

  • As-Cut Wafer SiC Processing Parts Manufacturer

  • 6 inch Unpolished SiC Wafer T-900um

  • 2 Inch Raw Cut SiC Wafer T-1200um

  • 2 inch Raw-Cut SiC Wafer T-900um

  • 碳化硅As-cut切割晶片

  • SiC As-cut Substrate Wafer

  • 碳化硅切割片

  • 4inch SiC As-cut Substrate

  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us

Homray Material Technology. All rights Reserved.
E-mail:kim@homray-material.com;tina@homray-material.com

M.P: +86-15366208370 ; +86-15366203573