4inch SiC As-cut Substrate

Homray Material Technology as the 4 inch SiC  As-cut substrate manufacturer and supplier, provide un-polished SiC wafer, we also called SiC as-cut wafer. The mainstream is 6 inch As-cut SiC Wafer, but we still keep few 4 inch capacity allocation for some our customers. For conductive N type SiC Slicing wafer thickness is about 440um, and for semi-insulating SiC As-cut wafer is about 600um. Cutomers always purchase raw-cut SiC wafer for testing lapping and polishing machine. 

 

The polishing process of SiC wafer can be divided into rough polishing and fine polishing, rough polishing is mechanical polishing, the purpose is to improve the processing efficiency of polishing. The key research direction of mechanical polishing of SiC single crystal substrate is to optimize the process parameters, improve the surface roughness of wafer and increase the material removal rate. Fine polishing is single-side polishing, chemical mechanical polishing is the most widely used polishing technology, through chemical corrosion and mechanical wear synergistic effect, to achieve material surface removal and flattening.

SiC As-cut Substrate Specification