GaN On SiC RF HEMT Epi Wafer Manufacturer

As the leading manufacturer and supplier of GaN (Gallium Nitride) Epi (Epitaxial) wafer and GaN-On-SiC Epi Wafer For RF HEMT application. HMT company supply 4inch and 6inch GaN on SiC Epi wafer for RF HEMT applications. SiC (Silicon Carbide) substrate thickness is 500um. Customized each layer thickness are available in HMT. Our GaN epi-wafers have been proven for high performance DC/RF applications.

Homray Material Technology provides high-performance and high-quality GaN HEMT epitaxial wafers with:

• High epi-layer uniformity
• High breakdown voltage and low leakage current
  
• Excellent two-dimensional electron gas（２DEG）properties
  
• Low RF loss achieved by optimized interlayer growth techniques
  
• Clean surface with minimal particles, leading to high device production yields.

Standard Layer Structure For RF HEMT      4 inch GaN on SiC Epi Wafer Picture

 

Standard Specification For RF HEMT