Production Grade SiC Ingots

HMT as the leading manufacturer and suppliers of SiC ingots, we offer both N type and SI type of SiC ingots with production grade. With many years of SiC ingots manufacturing experience, our SiC ingots have been used in many high quality production grade SiC substrate wafer manufacturering in domestic and abroad. Customized SiC ingots and SiC substrate wafers are available in HMT.

HMT also provide 4H-SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology, established a production line to manufacture SiC substrate.Please contact us for quotation and lead time.



Silicon Carbide is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. SiC is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers). 

Electronics based on SiC shows advantages compared to Si-devices, where environmental conditions are adverse, i.e. ionizing radiation, heat-aggressive chemicals. For instance, SiC-based electronics would help to reduce weight and therefore costs of spacecraft, since SiC-devices showed to be much more resistant to ionizing radiation than Si-devices. Thus, a reduction of radiation-shielding is possible. Further, they may reduce or eliminate the use of cooling systems that have to be implemented as soon as Si-electronics is used.

 

SiC Ingots Package