4H-SiC Wafer/Substrate Manufacturer

There are different polytypes of SiC Wafer,including 4H-SiC and 6H-SiC, HMT only produce 4H-SiC Wafers dimension range from 2 inch to 8 inch. We supply 4H-Conductive type SiC Wafer and 4H Semi-insulated type SiC Substrate wafer. 4H-SiC has a higher electron mobility than 6H-SiC, making it ideal for high frequency and high power devices. 


Difference between 4H-SiC and 6H-SiC

In terms of physical properties, both 4H-SiC and 6H-SiC exhibit similar properties, with high hardness, excellent thermal conductivity, and excellent chemical resistance. However, due to differences in crystal structure, 4H-SiC has higher thermal conductivity along the C-axis, while 6H-SiC shows higher thermal conductivity at the base plane, a difference that makes each polytype suitable for specific applications that require heat dissipation in different directions.

The electrical properties of 4H SiC and 6H-SiC also differ due to their crystal structure, and 4H-sic has a higher electron mobility compared to 6H-SiC, making it ideal for high frequency and high power devices. 6H-SiC, on the other hand, exhibits a low concentration of deep-level defects, making it suitable for applications requiring high-quality substrates with low carrier recombination rates.