4H-SI SiC Substrate Manufacturer

As a professional SiC Substrate Manufacturer, HMT can provide research grade SiC substrate for semi-insulated type. The SiC substrate are mainly 4 inch 6 inch and 8 inch. Semi-insulated SiC Substrate has high resistivity >1E8 ohm.cm and thickness is 500um±25um.  GaN on SiC epi wafer using semi-insulated SiC substrate wafer, which can be further made into microwave RF devices and applied in 5G communication, radar and other fields.

Semi-insualted SiC Substrate Basic Parameters
Dimension: 4 inch 6 inch 8 inch
Thickness: 500um
Dopant: Un doped
Resistivity: >1e8 ohm.cm
Orientation: on axis 0±0.15°
Grade: D grade R grade P grade
MPD: Different grade has different MPD parameters
Surface: Si face CMP C face polished

Two types of SiC Substrate Picture

Advantages of SiC substrate:

The lattice constants of SiC substrate and gallium nitride (GaN) epitaxial layer match, and the chemical properties are compatible.

The thermal conductivity of SiC is excellent (more than 10 times higher than that of sapphire) and the thermal expansion coefficient of GaN epitaxial layer is similar.

SiC is a conductive semiconductor, can make a vertical structure device, its two electrodes are distributed on the surface and bottom of the device, can solve the shortcomings of the horizontal structure of the sapphire substrate must be packaged;

The SiC substrate does not require a current diffusion layer, so the light will not be absorbed by the material of the current diffusion layer, which in turn improves the light output efficiency.