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Home > Products > SiC Substrate Wafer > Dummy SiC Substrate > SiC Substrate Wafer Manufacturer

SiC Substrate Wafer Manufacturer

Grade:  Dummy Grade
Dimension: 2 inch to 8 inch
Type: 4H-N ; 4H-SI

Thickness: 350um 500um

Product Description

As the leading manufacturer and supplier of SiC (Silicon carbide) substrate wafer, Homray Material Technology can provide dummy D grade silicon carbide SiC substrate wafer from 2inch to 8inch,both N type and semi insulating type.

Silicon carbide wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of silicon carbide wafer can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.



Homray Material Technology provide high quality silicon carbide substrate to electronic and optoelectronic industry. Silicon carbide subsrate wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC substrate wafer is more suitable for high temperature and high power device. Silicon carbide substrate can be supplied in diameter 2 inch,4inch,6inch 8inch, both 4H-N or 4H-SI. 



Related Products

  • D Grade 4 inch SiC Substrate Wafer Manufacturer

  • D Grade 6 inch SiC Wafer Manufacturer

  • D Grade 8 inch SiC Substrate Wafer Manufacturer

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Homray Material Technology. All rights Reserved.
E-mail:kim@homray-material.com;tina@homray-material.com

M.P: +86-15366208370 ; +86-15366203573