SiC Substrate Wafer
Dummy SiC Substrate
Research SiC Substrate
Production SiC Substrate
Ultralow MPD SiC Substrate
GaN Epitaxial Wafer
SiC As-cut Wafer
SiC Boule/Ingots
GaN Substrate Wafer
Free-Standing GaN
GaN-On-Sapphire Template
SiC Epitaxial Wafer

4 Inch Free-Standing GaN Substrate

Dimensions: Ф 100 mm ± 1 mm
Thickness: 400 ± 50 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 40 µm

Product Description

Gallium Nitride (or GaN) is the unique material of choice to solve energy problems of the future. As the leading manufacturer and supplier of GaN Substrate Wafer, Homray Material Technology can provide 4 inch N type Free-Standing GaN Substrate wafer. The thickness of Gallium Nitride substrate wafer is 400um. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.

GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore, GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV infrastructure in the networking, aerospace and defense sectors.