1 Inch AlN Single Crystal Substrate Wafer

HMT provides 1 inch AlN single crystal substrate wafers for semiconductor research, AlGaN epitaxy, high-power wide-bandgap devices and optoelectronic development. Aluminum nitride (AlN) combines a wide bandgap, high thermal conductivity, high breakdown field and strong chemical stability, making single-crystal AlN an attractive platform for advanced Al-rich AlGaN and other wide-bandgap semiconductor structures.

What Is an AlN Single Crystal Substrate Wafer?

An AlN single crystal substrate wafer is a wafer cut from bulk aluminum nitride crystal and processed for use as a crystalline growth or device-development platform. Compared with polycrystalline AlN ceramic substrates, single-crystal AlN provides a defined crystal structure and surface suitable for epitaxial semiconductor research.

The 1 inch format corresponds to approximately 25.4 mm in diameter, making it suitable for laboratory-scale epitaxy, material evaluation, device research and process development. HMT can discuss wafer orientation, thickness, surface finish and other specifications according to the intended application.For applications requiring established wide-bandgap substrate technologies, HMT also supplies 4H-SiC substrate wafers for power and RF semiconductor development.

AlN Substrate for AlGaN Epitaxy

One important research direction for single-crystal AlN is the epitaxial growth of Al-rich AlGaN. A bulk AlN substrate provides a chemically compatible III-nitride surface for developing high-aluminum-content AlGaN layers and related heterostructures.

Recent research has demonstrated high-voltage AlGaN-channel HEMTs grown on bulk AlN substrates. In one 2025 IEEE study, an Al₀.₆₅Ga₀.₃₅N-channel HEMT on bulk AlN achieved breakdown voltages above 2.7 kV, illustrating the potential of the AlN/AlGaN material platform for high-voltage semiconductor research.

For comparison, HMT also provides AlGaN/GaN epitaxial wafers using engineered AlN buffer structures on silicon substrates.

AlN for High-Power Semiconductor Research

Aluminum nitride (AlN) has attracted attention for advanced power electronics because of its wide bandgap, high critical electric field, high-temperature stability and strong resistance to harsh operating environments. These properties make AlN and Al-rich AlGaN material systems promising candidates for the development of high-voltage and high-temperature semiconductor devices.

A key research direction is the development of high-quality single-crystal AlN substrates with low defect density for the epitaxial growth of Al-rich AlGaN layers. Compared with conventional foreign substrates, a bulk AlN substrate provides a closely related III-nitride crystal platform for AlGaN epitaxy and can support the development of high-quality Al-rich semiconductor structures.

Al-rich AlGaN grown on bulk AlN is being investigated for high-voltage transistors and other wide-bandgap power devices. Recent research has demonstrated AlGaN-channel HEMTs on bulk AlN with breakdown voltages above 2.7 kV, highlighting the potential of the AlN/AlGaN material system for next-generation high-voltage power electronics.

AlN in Optoelectronics and UV Devices

AlN is also relevant to ultraviolet optoelectronics because its wide bandgap and III-nitride crystal structure provide a suitable material platform for Al-rich nitride semiconductor development. High-aluminum-content AlGaN is particularly important for deep-ultraviolet optoelectronic research.

In addition to power electronics, AlN-based material systems can therefore support research into UV LEDs, UV laser structures, photodetectors and other wide-bandgap optoelectronic devices. The specific device performance depends on epitaxial layer composition, defects, doping, strain and subsequent device processing.

Typical AlN Substrate Parameters

The specification of an AlN single crystal wafer should be selected according to the intended epitaxial and device process. Typical parameters to define include:

AlN Substrate Wafer Supplier for R&D

HMT focuses on semiconductor substrate materials including SiC and GaN wafers and can extend its substrate portfolio to application-specific AlN wafer requirements. The company's existing product range includes GaN substrates, GaN epitaxial wafers and SiC substrates used for power, RF and optoelectronic semiconductor development.

For a 1 inch AlN single crystal substrate wafer, customers can provide the required diameter, thickness, orientation, surface finish and intended application when requesting a quotation. This allows the wafer specification to be matched more closely with the subsequent epitaxy or device-development process.

Applications of 1 Inch AlN Single Crystal Substrates

Typical research and development applications include:

• High-voltage AlGaN HEMTs
• Wide-bandgap power semiconductor research
• UV LED and UV optoelectronic research
  
• High-temperature semiconductor devices
  
• Epitaxial process development
• University and laboratory semiconductor research

HMT's semiconductor material portfolio also includes SiC epitaxial wafers for power semiconductor development.

Frequently Asked Questions

What is the diameter of a 1 inch AlN substrate wafer?

A 1 inch AlN substrate wafer has a nominal diameter of approximately 25.4 mm.

What is an AlN single crystal substrate used for?

An AlN single crystal substrate can be used as a crystalline platform for AlGaN epitaxy, wide-bandgap semiconductor research, UV optoelectronics and high-voltage device development.

Can Al-rich AlGaN be grown on an AlN substrate?

Yes. Bulk AlN is an important substrate platform for research on Al-rich AlGaN epitaxy. Recent IEEE research has demonstrated Al-rich AlGaN-channel HEMTs on bulk AlN with breakdown voltages above 2.7 kV.