GaN material, as a kind of wide band gap semiconductor material, has been studied for many years in the academic circle. In the 1990s, GaN began to shine in the blue LED, and then aroused wider attention in the industry.

As the leading manufacturer of GaN Substrate wafer, Homray Material Technology provide GaN on sapphire Epi wafer, LED Epi wafer for blue and UV chips.GaN has stable chemical properties, and GaN is a semiconductor material with direct band gap, and its band gap width can cover from ULTRAVIOLET to infrared. Therefore, GaN material has become the basis for the realization of photoelectric devices such as ULTRAVIOLET, blue, green LED and laser, and is widely used in lighting, display, communication, medical and other fields.


GaN material has a band width of 3.4eV and a high density of 2DEG at the heterojunction. Meanwhile, GaN material has high critical breakdown electric field and saturated electron velocity, and has unique advantages in power electronic devices, such as high voltage resistance, high switching frequency, high temperature resistance, etc.

GaN power electronic devices have the advantages of higher energy conversion efficiency, higher available frequency, smaller device size, higher power density, faster speed, etc. Therefore, GaN materials can be widely used in the field of power electronic devices.