The Star of Third-Generation Semiconductor -SiC Substrate Wafer

While the fuel efficiency of traditional cars is determined by the engine, the range of future electric cars will be determined by the third-generation semiconductor SiC technology. Yole Developpement reports that SiC（Silicon Carbide） has become a market darling since Tesla (TSLA) led the world in using it for Model 3 inverter modules to create superior range.

As the leading SiC Substrate wafer manufacturer, Homray Material Technology offer 4 inch SiC Substrate and 6 inch SiC Wafer. We provide conductive N type and semi-insulating SI type. There are 4 grade for customers selecting: Ultralow MPD grade, production grade,research grade and dummy grade SiC substrate.
 

SiC wide energy Gap (Band Gap) than the existing Si (silicon) Gap width more than 3 times wider, can withstand more than 10 times the voltage, SiC low loss, high power characteristics suitable for high voltage and high current application field, including electric vehicles, electric vehicle charging infrastructure, solar energy and offshore wind power and other green power generation equipment.ompared with traditional Si, the third-generation semiconductor material SiC can reduce the power conversion loss by 50%, reduce the power conversion cost by 20%, and improve the endurance of electric vehicles by 4%.

According to statistics, the annual output value of the global automobile and its surrounding industries is about 4 trillion US dollars in 2020, 10 times that of the semiconductor industry, which is 425 billion US dollars.The rapid growth of a huge electric car market will make the traditional gasoline-powered car industry deconstruct, and the semiconductor industry will have a huge new demand.