Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Wafer, GaN Substrate Wafer, Silicon Carbide(SiC) Wafer, SiC Substrate Wafer, 4H-N/4H-SI SiC Substrate, SiC ingots and GaN Epi Wafer (GaN-On-Si, GaN-On-Sapphire, GaN-On-SiC ), SiC Epi Wafer, SiC Bulk Crystal etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our
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测试D级碳化硅晶锭晶棒
直径:100±0.25mm
厚度: Min ≥15mm
等级:测试D级
类型:4H-N导电型;4H-SI半绝缘型 -
碳化硅晶片 产品级SiC衬底晶片
等级:产品级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型
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GaN Epitaxial On Si For Power HEMT D-Mode
GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter: 2inch,4inch,6inch,8inch
Substrate Thickness: 675um,1000um
Epi Layer Total Thickness:2~5.5um -
GaN Epitaxial On SiC For RF HEMT
GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4''6''
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um