HMT supply high quality 4H-SiC substrate wafer and SiC ingots with conductive N type and semi-insulating type. Then what is SiC? Si（silicon）+ C（carbon）=SiC

Silicon carbide SiC is a kind of ⅳ - ⅳ compound semiconductor material formed by THE ratio of C and Si at 1:1. Its hardness is second only to diamond. It is a kind of semiconductor material with great development potential, and also belongs to high hard brittle material.   

SiC is a wide band gap semiconductor material, also known as the third generation of semiconductor materials, compared with the first and second generation of semiconductor materials, SiC has a large band gap width, high breakdown field strength, high thermal conductivity, electronic saturation drift rate and other performance advantages.

SiC Ingot                                                                   SiC Substrate
 

Advantages of SiC Devices

1.Higher thermal conductivity, better heat dissipation. Temperature is one of the main reasons affecting device life, thermal conductivity represents the thermal conductivity of materials, SiC high thermal conductivity can effectively conduct heat, reduce the temperature of the device, maintain its normal operation, which makes the cooling system can be better optimized. 

2.Higher electron saturation drift rate, with high frequency characteristics. The saturation drift rate of electrons refers to the maximum directional movement speed of electrons in the semiconductor material, which determines the switching frequency of the device. The electron saturation drift rate of SiC is twice that of silicon, which helps to improve the operating frequency and miniaturize devices. 

3.Wider band gap and higher temperature tolerance. The gap width determines the difficulty for electrons to jump from valence band to conduction band, and determines the voltage resistance, working temperature and conduction loss of the device. SiC has larger band gap width, can ensure that the material under high temperature and high pressure, electronic transition is not easy, intrinsic excitation is weak, so as to withstand higher operating temperature and voltage and lower conduction loss. 

Silicon carbide SiC is mainly used in electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid and so on.