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  • The Star of Third-Generation Semiconductor -SiC Substrate Wafer

    While the fuel efficiency of traditional cars is determined by the engine, the range of future electric cars will be determined by the third-generation semiconductor SiC technology. Yole Developpement reports that SiC(Silicon Carbide) has become a market darling since Tesla (TSLA) led the world in using it for Model 3 inverter modules to create superior range.As the leading SiC Substrate wafer manufacturer, Homray Material Technology offer 4 inch SiC Substrate and 6 inch SiC Wafer.

  • Gallium Nitride Substrate GaN Substrates Offer High Performance At A Price

    GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to market research firm Strategies Unlimited. By 2007 this is predicted to soar to $4.5 billion, with GaN-based LEDs, lasers and electronic devices contributing $4 billion, $402 million and $129 million, respectively.Today, GaN substrates are produced by vapor-phase transport

  • GaN Power Amplifier With World's Highest Output Performance For W-band Wireless

    Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.This can be used in a high-capacity wireless network with coverage over a radius of several kilometers. In areas where fiber-optic cable is difficult to lay, to achieve high-speed wireless communications of several gigabits per second, one promising approach is to use high-frequency bands, such as the W band, which uses a wide frequency band.

  • Homray Material Offers Gallium Nitride Wafer/GaN Substrate

    We are pleased to offer GaN substrate to our customers including many who are developing better and more reliable for GaN HEMTs, which have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. Second generation technology with shorter gate lengths will be addressing higher frequency telecom and aerospace applications. Our GaN substrate has excellent properties, it’s a very hard, mechanically stable wide bandgap semiconductor material with high heat

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