Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.This can be used in a high-capacity wireless network with coverage over a radius of several kilometers. In areas where fiber-optic cable is difficult to lay, to achieve high-speed wireless communications of several gigabits per second, one promising approach is to use high-frequency bands, such as the W band, which uses a wide frequency band.

We are pleased to offer GaN substrate to our customers including many who are developing better and more reliable for GaN HEMTs, which have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. Second generation technology with shorter gate lengths will be addressing higher frequency telecom and aerospace applications. Our GaN substrate has excellent properties, it’s a very hard, mechanically stable wide bandgap semiconductor material with high heat

SAN DIEGO, July 31, 2017 /PRNewswire-iReach/ -- TECHCET CA—the advisory service firm providing electronic materials information—today announced that the silicon wafer supply for semiconductor device fabrication is forecasted to appreciably lag demand starting next year, and could remain in shortage through the year 2021 despite investments in China. Silicon wafer area demand is forecasted to steadily increase at a CAGR of ~3.1% over the 2016-2021 period to reach over 13,000 million square inches (MSI).